InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models
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چکیده
منابع مشابه
Full Band Atomistic Modeling of Homo-junction InGaAs Band-to-Band Tunneling Diodes Including Band Gap Narrowing
A homo-junction In0.53Ga0.47As tunneling diode is investigated using full-band, atomistic quantum transport approach based on a tight-binding model (TB) and the Non-equilibrium Green’s Function formalism. Band gap narrowing (BGN) is included in TB by altering its parameters using the Jain-Roulston model. BGN is found to be critical in the determination of the current peak and the second turn-on...
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A dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy in Engineering – Electrical Engineering and Computer Sciences and the Designated Emphases in Nanoscale Science and Engineering and Energy Science and Technology in the Graduate Division of the University of California, Berkeley Committee in charge: Professor Tsu-Jae King Liu, Chair Profes...
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A detailed study on the mechanism of band-to-band tunneling in carbon nanotube field-effect transistors (CNFETs) is presented. Through a dual-gated CNFET structure tunneling currents from the valence into the conduction band and vice versa can be enabled or disabled by changing the gate potential. Different from a conventional device where the Fermi distribution ultimately limits the gate volta...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2014
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4875535